Determination of the Optimal Sensing Temperature in Pt/Ta₂O₅/MoO₃ Schottky Contacted Nanobelt Straddling Heterojunction.
Authors of this article are:
Cheung KW, Yu J, Ho D.
A summary of the article is shown below:
Nanostructured Schottky barrier gas sensors have emerged as novel semiconductor devices with large surface areas and unique electronic characteristics. Although it is widely known that operating these gas sensors requires heating to an optimal temperature for the highest sensitivity, the fundamental mechanism that governs the temperature-dependent sensitivity has yet been well understood. In this work, we present new evidence to support that thermionic field emission (TFE) is the dominant transport mechanism for Schottky contacted nanostructured heterojunction gas sensors at their optimal sensing temperature. Through the fabrication and characterization of Pt/MoO₃ Schottky contacts, and Pt/Ta₂O₅/MoO₃ heterojunctions, we found a previously unreported connection between TFE transport and optimal gas sensing temperature. This connection enables the description of Schottky barrier gas sensing performance using transport theory, which is a major step towards systematic engineering of gas sensors with nanostructured high-k oxide layers.
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This article is a good source of information and a good way to become familiar with topics such as:
MoO3;Schottky barrier;Ta2O5;heterojunction;nanobelt;optimal sensing temperature