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An Improved UU-MESFET with High Power Added Efficiency.

A new interesting article has been published in Micromachines (Basel). 2018 Nov 5;9(11). pii: E573. doi: 10.3390/mi9110573. and titled:

An Improved UU-MESFET with High Power Added Efficiency.

Authors of this article are:

Jia H, Hu M, Zhu S.

A summary of the article is shown below:

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

Check out the article’s website on Pubmed for more information:



This article is a good source of information and a good way to become familiar with topics such as:

4H-SiC;MESFET;power added efficiency;ultrahigh upper gate height

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