Nanoscale anomalous noise source switching with a trap-free current transition in a PEDOT:PSS film.
Authors of this article are:
Cho DG, Yang M, Lee M, Hong S.
A summary of the article is shown below:
We imaged localized charge traps in a PEDOT:PSS film by using a scanning noise microscopy (SNM) system and observed anomalous noise source switching behaviors affecting the electrical characteristics of the film. The SNM system enabled us to measure the localized electrical current and noise maps of a PEDOT:PSS film with nanoscale resolution. The measured maps of the currents and noises were utilized to calculate effective charge trap densities in the film. As a result, we found non-homogeneous distributions of currents and effective charge trap densities on the localized area of the film due to the non-uniform distribution of PEDOT-rich and PSS-rich grains. At a low bias voltage, we observed high current levels and high charge trap densities in PEDOT-rich grains, while PSS-rich grains showed low-current levels and charge trap densities. Interestingly, the charge trap densities in both grains showed a noise source switching behavior with respect to the applied bias voltages, and the behavior strongly affected their electrical characteristic such as the trap-free transition of currents. These results indicate that the charge traps in a PEDOT:PSS film play an important role in the electrical characteristics of the films. Our observations provide a valuable insight on the understanding of the electrical characteristics of PEDOT:PSS films and an important guideline for its practical applications.
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