Field-Effect Device Using Quasi-Two-Dimensional Electron Gas in Mass-Producible Atomic-Layer-Deposited Al2O3/TiO2 Ultrathin (<10 nm) Film Heterostr...
Authors of this article are:
Seok TJ, Liu Y, Jung HJ, Kim SB, Kim DH, Kim SM, Jang JH, Cho DY, Lee SW, Park TJ.
A summary of the article is shown below:
We report the field-effect transistors using quasi-two-dimensional electron gas generated at an ultrathin (∼10 nm) Al2O3/TiO2 heterostructure interface grown via atomic layer deposition (ALD) on a SiO2/Si substrate without using a single crystal substrate. The 2DEG at the Al2O3/TiO2 interface originates from oxygen vacancies generated at the surface of the TiO2 bottom layer during ALD of the Al2O3 overlayer. High-density electrons (∼1014 cm-2) are confined within a ∼2.2 nm distance from the Al2O3/TiO2 interface, resulting in a high on-current of ∼12 μA/μm. The ultrathin TiO2 bottom layer is easy to fully deplete, allowing an extremely low off-current, a high on/off current ratio over 108, and a low subthreshold swing of ∼100 mV/decade. Via the implementation of ALD, a mature thin-film process can facilitate mass production as well as three-dimensional integration of the devices.
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This article is a good source of information and a good way to become familiar with topics such as:
aluminum oxide;atomic layer deposition;field-effect transistor;titanium oxide;two-dimensional electron gas
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